Product specification
SPECIFICATIONS
Deep UV core material · SiC / AlN epitaxial wafer / template
WAlN-SC001
50~5000 nm，(002) ，(102)
Hubei DUVTek Co., Ltd.
Hubei DUVTek Co., LTD.
B08, East Lake high tech creative city, Phoenix Road, 9, Wu Tong Hu, Ezhou, Hubei
Building B08, Donghu High-tech Innovation City, No. 9 Fenghuang Avenue, Wutong Lake New District, Ezhou, Hubei, China
| Performance properties | Parameter value |
|---|---|
| Diameter | 2 inch (50.8±0.05 μm) |
| Substrate type | 6H/4H-SiC <0001>±0.5°, N type, D degree |
| Substrate thickness | 330±25 μm |
| Epilayer thickness | 50~5000 nm |
| (002) crystal quality (FWHM of 002 XRC) | |
| (102) crystal quality (FWHM of 102 XRC) | |
| Front side roughness | |
| Edge exclusion | |
| Through crack | undefined |
| Surface orientation of a-plane | |
| Surface orientation of m-plane | |
| Primary flat orientation | |
| Primary flat length | |
| Back side roughness |